Semi conductor devices practice · Mixed difficulty

Using Boolean algebra, the value of $(A \cdot B)+A$ is equal to

Assertion : Absorption factor for $\mathrm{GaAs}$ is larger as compared to $\mathrm{Si}$ for sunlight.

Reason : $\Delta \mathrm{E}_{\mathrm{g}}$ is more for $\mathrm{GaAs}$.

For an insulator the forbidden energy gap is

Which one of the following is the weakest kind of bonding in solids

Zener breakdown in a semi-conductor diode occurs when

The addition of antimony atoms to a sample of intrinsic germanium transforms it to a material which is

In a common base transistor amplifier, the input and the output resistance are $500 ~\Omega$ and $40 ~\Omega$, and the emitter current is $1.0 \mathrm{~mA}$. Find the input and the output voltages. Given $\alpha=0.95$

Platinum and silicon are heated upto ${250^ \circ }C$ and after that cooled. In the process of cooling

The barrier potential of a p-n junction does not depends on:

(a) types of semi conductor material

(b) physical shape or size of the diode

(c) design of the diode

Which one of the following is correct:

An intrinsic semiconductor at 0 K temperature behaves like

The density for simple cubic lattice is (where $A$ is atomic weight, $N$ is Avogadro’s number and $a$ is a lattice parameter)

Consider the following statements I and II and
identify the correct answer from the given options.

Statement-I: A zener diode should be connected
in reverse bias for proper functioning.

Statement-II: The potential barrier of a silicon
p-n junction lies between 2 V and 5 V.

Choose the correct answer from the options given
below.

Which of the following materials in non crystalline

The Boolean equation $\mathrm{x}=[(\mathrm{A}+\overline{\mathrm{B}}) \cdot(\mathrm{B}+\mathrm{C})] \cdot \mathrm{B}$ can be simplified to

A diode is connected to a forward bias to a battery of emf 5V and a series resistance R. In its V-I characteristics it is found that a minimum current of 1 mA flows at the knee point. The maximum value of R will be

Intrinsic semiconductor is electrically neutral. Extrinsic semiconductor having large number of current carriers would be

Assertion : During everse biasing a diode does not Conduct current

Reason : It narrows the depletion layer

Statement-I: In common base configuration, the current gain of the transistor is less than unity.

Statement-II: The collector terminal is reverse biased for amplification.

What is the coordination number of sodium ions in the case of sodium chloride structure

The temperature coefficient of a zener mechanism is

If a PN junction diode of depletion layer width $W$ and barrier height ${V_0}$ is forward biased, then

Assertion: Silicon is preferred over germanium for making semiconductor devices.

Reason: The energy gap for germanium is more than the energy gap of silicon.

Calculate the current amplification factor $\beta$ (beta) when change in collector current is 3 mA and change in base current is $10\,\,\mu A$

Pentavalent impurity is called

Zener diode is a heavily doped P-N junction and
operated in

In a P-N junction, there is no appreciable current
if

The visible LED are made of a material having energy gap:

The effect of increase in temperature on the number of electrons in conduction band $\left(n_{\mathrm{e}}\right)$ and resistance of a semiconductor will be as

For a junction diode the ratio of forward current $\left( {{I_F}} \right)$ and reverse current $\left( {{I_r}} \right)$ is

[${I_e} =$electronic charge, $V =$voltage applied across junction, $k =$ Boltzmann constant, $T =$temperature in kelvin]

A transistor is operated in common – emitter configuration at ${V_C} = 2\,V$ such that a change in the base current from $100\,\mu A$ to $200\,\mu A$ produces a change in the collector current is 5 mA to 10 mA then current gain is