A zener diode has a contact potential of 1 V in the absence of biasing. It undergoes Zener breakdown for an electric field of ${10^6}$ V-${{\rm{m}}^{ - 1}}$ at the depletion region of $p$-$n$ junction. If the width of the depletion region is 2.5 $\mu $m, what should be the reverse biased potential for the Zener breakdown to occur?

JEE PHYSICS MCQ: SEMI CONDUCTOR DEVICES

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A zener diode has a contact potential of 1 V in the absence of biasing. It undergoes Zener breakdown for an electric field of

{10^6}

V-

{\mathrm{m}^{ - 1}}

at the depletion region of

p

n

junction. If the width of the depletion region is 2.5

\mu

m, what should be the reverse biased potential for the Zener breakdown to occur?

View answer and explanation

Correct option: B

2.5 V

Option B (2.5 V) is correct because it calculates the reverse biased potential by multiplying the electric field by the width of the depletion region and subtracting the contact potential.

JEE PHYSICS MCQ: SEMI CONDUCTOR DEVICES

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