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JEE • PHYSICS • SEMI CONDUCTOR DEVICES

Semi conductor devices practice · Mixed difficulty

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Practice format and chapter quiz

These sets use single-correct-answer MCQs. They do not cover every JEE Main or JEE Advanced question format and are not full-length mock papers.

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Showing 1-30 of 370 questions
1 Medium
1 of 370
Remembering +4 | -1
A PN-junction has a thickness of the order of
View answer and explanation
Correct option: C
10−6 m{10^{ - 6}}\,{\text{m}}
Option C (10−6 m{10^{ - 6}}\,{\text{m}}) is correct because the depletion region in a PN junction is typically on the order of micrometers.
2 Medium
2 of 370
Understanding +4 | -1
In a PNPPNP transistor the base is the NN-region. Its width relative to the PP-region is
View answer and explanation
Correct option: A
Smaller
Option A (Smaller) is correct because the base in a PNP transistor is intentionally made very thin to minimize recombination of carriers.
3 Medium
3 of 370
Understanding +4 | -1
A solid reflects incident light and its electrical conductivity decreases with temperature. The binding in this solid is
View answer and explanation
Correct option: C
Metallic
Option C (Metallic) is correct because metals reflect light due to free electrons and their conductivity decreases with increasing temperature.
4 Medium
4 of 370
Remembering +4 | -1
An alternating current can be converted into direct current by a
View answer and explanation
Correct option: D
Rectifier
Option D (Rectifier) is correct because a rectifier is an electrical device that converts alternating current (AC) to direct current (DC).
5 Medium
5 of 370
Understanding +4 | -1
A N–P–N transistor is used in inverse active mode of operation then its emitter base junction should be in
View answer and explanation
Correct option: B
Reverse biased
Option B (Reverse biased) is correct because in inverse active mode, the emitter-base junction is reverse biased.
6 Medium
6 of 370
Understanding +4 | -1
In the case of constants α  and  β\mathrm{\alpha\; and\; \beta } of a transistor
View answer and explanation
Correct option: D
β>1,\mathrm{\beta } > \mathrm{ }1,α<1\mathrm{\alpha } < 1
Option D (β>1,α<1\mathrm{\beta } > \mathrm{ }1,\mathrm{\alpha } < 1) is correct because in a transistor, alpha (α\alpha) is the current gain from emitter to collector, which is always less than 1, and beta (β\beta) is the current gain from base to collector, which is typically greater than 1.
7 Medium
7 of 370
Understanding +4 | -1
When forward bias is applied to a PP-NN junction, then what happens to the potential barrier VB{V_B}, and the width of charge depleted region xx
View answer and explanation
Correct option: D
VB{V_B} decreases, xx decreases
Option D (VB{V_B} decreases, xx decreases) is correct because forward bias reduces the potential barrier and depletion region width.
8 Medium
8 of 370
Application +4 | -1
In a common-base mode of a transistor, the collector current is 5.488 mA for an emitter current of 5.60 mA. The value of the base current amplification factor (β\mathrm{\beta }) will be
View answer and explanation
Correct option: A
49
Option A (49) is correct because using the formula β=ICIE−IC\mathrm{\beta } = \frac{{{I_C}}}{{{I_E} - {I_C}}} with the given values yields 49.
9 Medium
9 of 370
Understanding +4 | -1
Which one of the following statement is not correct in the case of light emitting diodes?
A) It is a heavily doped p−np-n junction.
B) It emits light only when it is forward biased.
C) It emits light only when it is reverse biased.
D) The energy of the light emitted is equal to or slightly less then the energy gap of the semiconductor used.
Choose the correct answer from the options given below:
View answer and explanation
Correct option: B
CC
Option B (C) is correct because LEDs emit light only when forward biased, not reverse biased.
10 Medium
10 of 370
Application +4 | -1
Transistor with β=60\beta=60 is connected to common base configuration. For an emitter current of 5 mA5 \, \mathrm{mA}, the value of collector current will be nearly
View answer and explanation
Correct option: D
4.9 mA4.9 \mathrm{~mA}
Option D (4.9 mA4.9 \mathrm{~mA}) is correct because it is calculated using the relationship between β\beta and α\alpha in a common base configuration.
11 Medium
11 of 370
Understanding +4 | -1
A full wave rectifier circuit consists of two p-n junction diodes, a centre-tapped transformer, capacitor and a
load resistance. Which of these components remove the ac ripple from the rectified output?
View answer and explanation
Correct option: A
Capacitor
Option A (Capacitor) is correct because a capacitor is used in rectifier circuits to filter out the AC ripple and provide a smoother DC output.
12 Medium
12 of 370
Understanding +4 | -1
Let ne{n_e} and nh{n_h} represent the number density of electrons and holes in a semiconductor. Then
View answer and explanation
Correct option: D
ne{n_e} = nh{n_h} if the semiconductor is intrinsic
Option D (ne{n_e} = nh{n_h} if the semiconductor is intrinsic) is correct because in an intrinsic semiconductor, the number of electrons equals the number of holes.
13 Medium
13 of 370
Application +4 | -1
26 If α=0.98\alpha=0.98 and current though emitter ie=20 mA\mathrm{i}_{\mathrm{e}}=20 \mathrm{~mA}, the value of β\beta is -
View answer and explanation
Correct option: B
49
Option B (49) is correct because it is the value of β calculated using the given value of α and the relation between α and β.
14 Medium
14 of 370
Remembering +4 | -1
Which gate is also called as inverter?
View answer and explanation
Correct option: C
NOT
Option C (NOT) is correct because a NOT gate performs the inversion operation, which is why it is also called an inverter.
15 Medium
15 of 370
Application +4 | -1
If A=B=1A=B=1, then in terms of Boolean algebra the value of A⋅B+AA \cdot B+A is not equal to
View answer and explanation
Correct option: D
Aˉ⋅B\bar{A} \cdot B
Option D (Aˉ⋅B\bar{A} \cdot B) is correct because when A=B=1, A⋅B+A=1A \cdot B + A = 1, but Aˉ⋅B=0\bar{A} \cdot B = 0.
16 Medium
16 of 370
Application +4 | -1
In a transistor circuit, the collector current is 50  mA\,{mA} and the base current is 1  mA1\, {~mA}. The current gain α\alpha is
View answer and explanation
Correct option: C
5051\frac{50}{51}
Option C (5051\frac{50}{51}) is correct because the current gain α\alpha is defined as IC/IEI_C/I_E and IE=IC+IBI_E = I_C + I_B.
17 Medium
17 of 370
Remembering +4 | -1
pp-type semiconductor are
View answer and explanation
Correct option: B
Produced when boron is added as an impurity
Option B is correct. p-type semiconductors are produced when trivalent impurities like Boron are added to intrinsic semiconductors.
18 Medium
18 of 370
Analyzing +4 | -1
Statement I: In a common-emitter transistor amplifier the input current is much less than output current.

Statement II: The common-emitter transistor amplifier has very high input impedance.
View answer and explanation
Correct option: C
Statement I is true; Statement II is false
Option C (Statement I is true; Statement II is false) is correct because in a common-emitter amplifier, the output current is much larger than the input current, but the input impedance is relatively low.
19 Medium
19 of 370
Remembering +4 | -1
In silicon when phosphorus is doped ……. is formed
View answer and explanation
Correct option: B
nn-type semiconductor
Option B (nn-type semiconductor) is correct because phosphorus is a pentavalent impurity, which donates extra electrons to silicon, creating an nn-type semiconductor.
20 Medium
20 of 370
Application +4 | -1
The gain factor of an amplifier is increased from 10 to
12 as the load resistance is changed from 4 kΩ4 \, k\Omega to 8 kΩ.8 \, k\Omega.
Calculate
(a) the amplification factor and (b) the plate
resistance.
View answer and explanation
Correct option: A
(a) 15; (b) 2 kΩ2 \, \mathrm{k} \Omega
Option D (Statement- 1 is False, Statement-2 is True) is correct because the first statement requires zero net force, not just zero external torque, while the second statement accurately reflects momentum conservation in an isolated system.
21 Medium
21 of 370
Application +4 | -1
A transistor is operated in common – emitter configuration at VC=2 V{V_C} = 2\,V such that a change in the base current from 100 μA100\,\mu A to 200 μA200\,\mu A produces a change in the collector current is 5 mA to 10 mA then current gain is
View answer and explanation
Correct option: D
50
Option D (50) is correct because the current gain is the ratio of change in collector current to the change in base current.
22 Medium
22 of 370
Understanding +4 | -1
In n-type silicon, which of the following statement is true
View answer and explanation
Correct option: C
Holes are minority carriers and pentavalent atoms are the dopants
Option C (Holes are minority carriers and pentavalent atoms are the dopants) is correct because in n-type silicon, pentavalent impurities are added, making electrons majority carriers and holes minority carriers.
23 Hard
23 of 370
Remembering +4 | -1
The emission of electrons from the host atoms due
to the high electric field is known as
View answer and explanation
Correct option: B
internal field emission
Option B (internal field emission) is correct because it describes the process of electron emission from host atoms due to a strong electric field.
24 Medium
24 of 370
Application +4 | -1
In an p-n-p transistor working as a common base amplifier current gain is 0.96 and emitter current is 7.2 mA. The base current is
View answer and explanation
Correct option: B
0.29 mA
Option B (0.29 mA) is correct because it represents the base current calculated using the current gain and emitter current.
25 Medium
25 of 370
Remembering +4 | -1
In LED visible light is produced by
View answer and explanation
Correct option: B
Gallium arsenide
Option A (Gallium phosphide) is correct because Gallium phosphide is a semiconductor material used in LEDs to produce visible light.
26 Medium
26 of 370
Remembering +4 | -1
In order to rectify an alternating current one uses a
View answer and explanation
Correct option: B
Diode
Option B (Diode) is correct because a diode allows current to flow in only one direction, thus rectifying alternating current (AC) to direct current (DC).
27 Medium
27 of 370
Understanding +4 | -1
In a p−np - n junction diode
View answer and explanation
Correct option: A
The current in the reverse biased condition is generally very small
Option A (The current in the reverse biased condition is generally very small) is correct because in reverse bias, the depletion region widens, hindering the flow of majority carriers.
28 Medium
28 of 370
Remembering +4 | -1
In semiconductors the forbidden energy gap between V.B. and C.B. is of the order of
View answer and explanation
Correct option: B
1 eV1 \, \mathrm{eV}
Option B (1 eV1 \, \mathrm{eV}) is correct because the forbidden energy gap in semiconductors is typically around 1 eV.
29 Medium
29 of 370
Understanding +4 | -1
The plate current in a diode is 20 mA20 \mathrm{~mA} when the plate voltage is 50 V50 \mathrm{~V} or 60 V60 \mathrm{~V}. What will be the current if the plate voltage is 70 V?70 \mathrm{~V}?
View answer and explanation
Correct option: A
20 mA20 \mathrm{~mA}
Option A (20 mA20 \mathrm{~mA}) is correct because the diode is operating in the saturation region, where the current remains constant despite changes in voltage.
30 Medium
30 of 370
Remembering +4 | -1
The coordination number of body centred crystal is
View answer and explanation
Correct option: B
8
Option B (8) is correct because in a body-centered cubic crystal, each atom is in contact with eight other atoms.
Revision notes and key takeaways

Review SEMI CONDUCTOR DEVICES in your textbook or class notes, then use this set to check your understanding.

Key Takeaways

  • ✓ This set contains 370 single-correct-answer MCQs on SEMI CONDUCTOR DEVICES.
  • ✓ Try each question before opening its answer. Read the explanation where one is available.
  • ✓ Sign in to save submitted answers. Revisit incorrect answers alongside your textbook or class notes.
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