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JEE • PHYSICS • SEMI CONDUCTOR DEVICES

Semi conductor devices practice · Hard

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Practice format and chapter quiz

These sets use single-correct-answer MCQs. They do not cover every JEE Main or JEE Advanced question format and are not full-length mock papers.

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1 Hard
1 of 5
Remembering +4 | -1
The emission of electrons from the host atoms due
to the high electric field is known as
View answer and explanation
Correct option: B
internal field emission
Option B (internal field emission) is correct because it describes the process of electron emission from host atoms due to a strong electric field.
2 Hard
2 of 5
Application +4 | -1
A p−n  p - n\; junction has acceptor impurity concentration of 1017cm−3{10^{17}}\mathrm{c}{\mathrm{m}^{ - 3}} in the PP side and donor impurity concentration of 1016{10^{16}} cm−3\mathrm{c}{\mathrm{m}^{ - 3}} in the NN side. What is the contact potential at the junction? (kT=kT = thermal energy, intrinsic carrier concentration ni=1.4×1010{n_i} = 1.4 \times {10^{10}} cm−3\mathrm{c}{\mathrm{m}^{ - 3}} )
View answer and explanation
Correct option: A
(kTe)\left( {\frac{{kT}}{e}} \right) ln (4×10124 \times {10^{12}})
Option A ((kTe)\left( {\frac{{kT}}{e}} \right) ln (4×10124 \times {10^{12}})) is correct because it is calculated using the formula for contact potential, considering the acceptor and donor concentrations and intrinsic carrier concentration.
3 Hard
3 of 5
Understanding +4 | -1
Given below are three statements.

A. At absolute zero, Si acts as a perfect insulator.

B. When p-n junction diode is forward biased, both the thickness of depletion region and the barrier height are increased.

C. Order of energy band gap of C, Si and Ge is (E)C>(E)Si>(E)Ge.(\mathrm{E})_{\mathrm{C}}>(\mathrm{E})_{\mathrm{Si}}>(\mathrm{E})_{\mathrm{Ge}}.

Choose the correct answer from the options given below.
View answer and explanation
Correct option: D
Only A & C are correct
Option D is correct because at absolute zero, silicon acts as a perfect insulator, and the order of energy band gap is correctly given as (E)C > (E)Si > (E)Ge.
4 Hard
4 of 5
Understanding +4 | -1
Consider the following statements I and II and
identify the correct answer from the given options.

Statement-I: A zener diode should be connected
in reverse bias for proper functioning.

Statement-II: The potential barrier of a silicon
p-n junction lies between 2 V and 5 V.

Choose the correct answer from the options given
below.
View answer and explanation
Correct option: C
Statement-I is true but Statement-II is false
Option C is correct because a Zener diode operates in reverse bias, and the potential barrier of a silicon p-n junction is typically around 0.7V, not between 2V and 5V.
5 Hard
5 of 5
Understanding +4 | -1
Consider the following statements

(i) An intrinsic semiconductor will behave as insulator at T = 0 K

(ii) Doping pure silicon with trivalent impurities gives p-type semiconductors

(iii) The majority carriers in n-type semiconductors are electrons

(iv) Solar cell works when it is in forward bias

The correct statements(s) is/are
View answer and explanation
Correct option: C
Only (i), (ii) and (iii)
Option C (Only (i), (ii) and (iii)) is correct because intrinsic semiconductors act as insulators at 0K, doping silicon with trivalent impurities creates p-type semiconductors, and electrons are the majority carriers in n-type semiconductors.
Revision notes and key takeaways

Review SEMI CONDUCTOR DEVICES in your textbook or class notes, then use this set to check your understanding.

Key Takeaways

  • ✓ This set contains 5 single-correct-answer MCQs on SEMI CONDUCTOR DEVICES.
  • ✓ Try each question before opening its answer. Read the explanation where one is available.
  • ✓ Sign in to save submitted answers. Revisit incorrect answers alongside your textbook or class notes.
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