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JEE • PHYSICS • SEMI CONDUCTOR DEVICES

Semi conductor devices practice · Mixed difficulty

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Practice format and chapter quiz

These sets use single-correct-answer MCQs. They do not cover every JEE Main or JEE Advanced question format and are not full-length mock papers.

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Showing 121-150 of 370 questions

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121 Medium
121 of 370
Understanding +4 | -1
The operating point of transistor amplifier should be in
View answer and explanation
Correct option: A
middle of it’s active region
Option A (middle of it’s active region) is correct because the operating point, or Q-point, should be in the middle of the active region for optimal amplifier performance.
122 Medium
122 of 370
Remembering +4 | -1
The current in a diode is related to the voltage VV by the equation
View answer and explanation
Correct option: B
I∝V3/2I \propto {V^{3/2}}
Option B (I∝V3/2I \propto {V^{3/2}}) is correct because the current in a diode is related to the voltage V by Child-Langmuir law, which states that I∝V3/2I \propto V^{3/2}.
123 Medium
123 of 370
Remembering +4 | -1
In a transistor the base is
View answer and explanation
Correct option: A
An insulator
Option D (An extrinsic semiconductor) is correct because the base of a transistor is a thin, lightly doped region of semiconductor material.
124 Medium
124 of 370
Analyzing +4 | -1
Statement-I: The dominant mechanism for motion of charge carriers in forward and reverse biased silicon P−N\mathrm{P}-\mathrm{N} junction are drift in both forward and reverse bias.

Statement-II: In reverse biasing, no current flow through the junction.
View answer and explanation
Correct option: D
If both statements are incorrect.
Option D (If both statements are incorrect) is correct because in forward bias, diffusion dominates, and in reverse bias, drift dominates, and a small current *does* flow in reverse bias due to minority carriers.
125 Medium
125 of 370
Understanding +4 | -1
Assertion: For a conductor resistivity increases with increase in temperature.
Reason: Since ρ=mne2τ\rho=\frac{m}{n e^2 \tau}, when temperature increases the random motion of free electrons increases and vibration of ions increases which decreases τ\tau.
View answer and explanation
Correct option: A
If both assertion and reason are true and reason is the correct explanation of assertion
Option A (If both assertion and reason are true and reason is the correct explanation of assertion) is correct because increased temperature leads to increased resistivity due to decreased relaxation time.
126 Medium
126 of 370
Application +4 | -1
Suppose a pure Si{Si} crystal has 5×10285 \times 10^{28} atoms m−3{m}^{-3}. It is doped with 1ppm1 {ppm} concentration of pentavalent Arsenic. Calculate the number of holes formed. (ni=2.5×1016 m−3)\left(n_i=2.5 \times 10^{16} {~m}^{-3}\right).
View answer and explanation
Correct option: B
1.25×1010 m−31.25 \times 10^{10} {~m}^{-3}
Option B (1.25×1010 m−31.25 \times 10^{10} {~m}^{-3}) is correct because it is the number of holes calculated using the mass action law in semiconductors.
127 Medium
127 of 370
Understanding +4 | -1
In a transistor the collector current is always less than the emitter current because
View answer and explanation
Correct option: B
A few electrons are lost in the base and only remaining ones reach the collector
Option B (A few electrons are lost in the base and only remaining ones reach the collector) is correct because some of the electrons injected from the emitter into the base recombine with holes in the base region before reaching the collector.
128 Medium
128 of 370
Remembering +4 | -1
The coordination number of body centred crystal is
View answer and explanation
Correct option: B
8
Option B (8) is correct because in a body-centered cubic (BCC) crystal structure, each atom is surrounded by 8 nearest neighbors.
129 Medium
129 of 370
Understanding +4 | -1
To reduce the ripples in a rectifier circuit with capacitor filter
(a) RLR_L should be increased.
(b) Input frequency should be decreased.
(c) Input frequency should be increased.
(d) Capacitors with high capacitance should be used.
View answer and explanation
Correct option: D
a, c and d
Option D (a, c and d) is correct because increasing RLR_L, input frequency, and capacitance reduces the ripple factor in a rectifier circuit with a capacitor filter.
130 Medium
130 of 370
Application +4 | -1
If α\alpha and β\beta are the current gain in the CB\mathrm{CB} and CE\mathrm{CE} configurations respectively of the transistor circuit, then (β−α)/αβ=…(\beta-\alpha) / \alpha \beta=\ldots.
View answer and explanation
Correct option: B
1
Option B (1) is correct because using the relationship between alpha and beta, the expression simplifies to 1.
131 Medium
131 of 370
Understanding +4 | -1
Choose the correct statement about Zener diode
View answer and explanation
Correct option: D
It works as a voltage regulator in reverse bias and behaves like simple pn junction diode in forward bias.
The correct answer is It works as a voltage regulator in reverse bias and behaves like simple pn junction diode in forward bias because Zener diodes are designed to operate in reverse breakdown.
132 Medium
132 of 370
Understanding +4 | -1
n−p−nn - p - n transistor are preferred to p−n−pp - n - p transistor because they have
View answer and explanation
Correct option: D
Electrons having high mobility than holes
Option D (Electrons having high mobility than holes) is correct because electrons have higher mobility than holes, leading to better performance in n-p-n transistors.
133 Medium
133 of 370
Understanding +4 | -1
A doped semiconductor has impurity levels 30 meV30 \mathrm{~meV} below the conduction band.

(a) Is the material n-type or p-type?

(b) In a thermal collision, an amount kTk T of energy is given to the extra electron loosely bound to the impurity ion and this electron is just able to jump into the conduction band. Calculate the temperature TT.
View answer and explanation
Correct option: A
n-type; 348 K348 \mathrm{~K}
Option A (n-type; 348 K348 \mathrm{~K}) is correct because the impurity levels are below the conduction band, indicating an n-type semiconductor, and the temperature is calculated using kT=30meVkT = 30 \mathrm{meV}.
134 Medium
134 of 370
Remembering +4 | -1
The average value of output direct current in a half wave rectifier is
View answer and explanation
Correct option: A
I0/π{I_0}/\pi
Option A is correct. The average value of the output direct current in a half-wave rectifier is I0/π{I_0}/\pi, where I0{I_0} is the peak current.
135 Medium
135 of 370
Application +4 | -1
A light-emitting diode ( LEDL E D ) has the voltage drop of 2 V2 \mathrm{~V} across it and passes the current of 10 A10 \mathrm{~A}, when it operates with the 6 V6 \mathrm{~V} battery with a limiting resistor ' RR '. What is the value of R\mathrm{R} ?
View answer and explanation
Correct option: D
400 kΩ400 \mathrm{~k} \Omega
Option D (400 kΩ400 \mathrm{~k} \Omega) is correct because it is calculated using Ohm's law, considering the voltage drop across the resistor.
136 Medium
136 of 370
Understanding +4 | -1
Number of secondary electrons emitted per number of primary electrons depends on
View answer and explanation
Correct option: C
Intensity
Option A (Material of target) is correct because the number of secondary electrons emitted depends on the target material's properties and work function.
137 Medium
137 of 370
Understanding +4 | -1
If a small amount of a trivalent atom is dropped with silicon crystal, then
View answer and explanation
Correct option: D
There will be holes in majority
Option D (There will be holes in majority) is correct because doping silicon with a trivalent atom creates a p-type semiconductor with holes as the majority charge carriers.
138 Medium
138 of 370
Remembering +4 | -1
In a common emitter amplifier the output signal receive across
View answer and explanation
Correct option: A
Emitter - Collector
Option A is correct because in a common emitter amplifier, the output signal is taken between the emitter and collector terminals.
139 Medium
139 of 370
Application +4 | -1
For a constant collector-emitter voltage of 8 V8 \mathrm{~V}, the collector current of a transistor reached to the value of 6 mA6 \mathrm{~mA} from 4 mA4 \mathrm{~mA}, whereas base current changed from 20μA20 \mu \mathrm{A} to 25μA25 \mu \mathrm{A} value. If transistor is in active state, small signal current gain (current amplification factor) will be
View answer and explanation
Correct option: B
400
Option B (400) is correct because the small signal current gain is calculated by dividing the change in collector current by the change in base current.
140 Medium
140 of 370
Understanding +4 | -1
The incorrect statement about the property of a
Zener diode is:
View answer and explanation
Correct option: D
Depletion region formed is very wide
Option D (Depletion region formed is very wide) is correct because Zener diodes are heavily doped, resulting in a narrow depletion region, not a wide one.
141 Medium
141 of 370
Understanding +4 | -1
Assertion : Transistor can be used as a switch.

Reason : Both linear & non-linear voltage bias dependence occurs in it.
View answer and explanation
Correct option: B
If both Assertion and Reason are true but Reason is not a correct explanation of the Assertion
Option B is correct because transistors can act as switches due to their ability to operate in cutoff and saturation regions, but this switching action isn't directly explained by linear/non-linear voltage bias dependence.
142 Medium
142 of 370
Application +4 | -1
On applying a potential of −1  volt- 1\;volt at the grid of a triode, the following relation between plate voltage Vp(volt){V_p}\left( {volt} \right) and plate current Ip{I_p} (in mAmA) is found Ip=0.125Vp−7.5{I_p} = 0.125{V_p} - 7.5. If on applying −3  volt- 3\;volt potential at grid and 300  V300\;V potential at plate, the plate current is found to be 5mA,5mA, then amplification factor of the triode is
View answer and explanation
Correct option: A
100
Option A (100) is correct because the amplification factor is calculated as the ratio of change in plate voltage to change in grid voltage while keeping the plate current constant.
143 Medium
143 of 370
Understanding +4 | -1
When p-type semiconductor is heated, the number
of:
View answer and explanation
Correct option: C
Electrons and holes increases equally
Option C is correct because when a p-type semiconductor is heated, the number of electrons and holes increases equally due to increased thermal generation.
144 Medium
144 of 370
Understanding +4 | -1
The nature of binding for a crystal with alternate and evenly spaced positive and negative ions is
View answer and explanation
Correct option: D
Ionic
Option D (Ionic) is correct because the crystal lattice is formed by electrostatic attraction between alternating positive and negative ions.
145 Medium
145 of 370
Understanding +4 | -1
In pp-type semiconductors, conduction is due to
View answer and explanation
Correct option: A
Greater number of holes and less number of electrons
Option A (Greater number of holes and less number of electrons) is correct because in p-type semiconductors, holes are the majority carriers and electrons are the minority carriers.
146 Medium
146 of 370
Remembering +4 | -1
The fermi energy for a substance is
View answer and explanation
Correct option: A
independence of TT
Option A (independence of TT) is correct because the Fermi energy is defined at absolute zero temperature and is independent of temperature.
147 Medium
147 of 370
Understanding +4 | -1
The correct relation between the two current gains α  and  β\alpha \;\mathrm{and}\;\beta in a transistor is
View answer and explanation
Correct option: C
α=β1+β\mathrm{\alpha } = \frac{\mathrm{\beta }}{{1 + \mathrm{\beta }}}
Option C (α=β1+β\mathrm{\alpha } = \frac{\mathrm{\beta }}{{1 + \mathrm{\beta }}}) is correct because it represents the correct relationship between the common-emitter current gain (β\beta) and the common-base current gain (α\alpha).
148 Medium
148 of 370
Remembering +4 | -1
Diode is used as a/an
View answer and explanation
Correct option: C
Rectifier
Option C (Rectifier) is correct because a diode's primary function is to allow current flow in one direction only, thus converting AC to DC.
149 Medium
149 of 370
Application +4 | -1
An experiment is performed to determine the I-V charactertitics of a Zener diode, which has a protective resistance of R=100Ω,R =100\Omega, and a maximum power of dissipation rating of 1Ω.1 \Omega. The minimum voltage range of the DC source in the circuit is
View answer and explanation
Correct option: B
0 – 24 V
Option B (0 – 24 V) is correct because the minimum voltage range is determined by the maximum power dissipation rating of the Zener diode and the protective resistance.
150 Medium
150 of 370
Understanding +4 | -1
Any digital circuit can be realised by repetitive use of only
View answer and explanation
Correct option: D
NOR gate
Option D (NOR gate) is correct because NOR and NAND gates are universal gates and can implement any digital circuit.
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