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JEE • PHYSICS • SEMI CONDUCTOR DEVICES

Semi conductor devices practice · Mixed difficulty

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Practice format and chapter quiz

These sets use single-correct-answer MCQs. They do not cover every JEE Main or JEE Advanced question format and are not full-length mock papers.

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Showing 331-360 of 370 questions

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331 Medium
331 of 370
Understanding +4 | -1
In BJT, maximum current flows in which of the following?
View answer and explanation
Correct option: A
Emitter region
Option A (Emitter region) is correct because the emitter current is the sum of the base and collector currents in a BJT.
332 Medium
332 of 370
Application +4 | -1
Three amplifier stages each with a gain of 10 are cascaded. The overall gain is
View answer and explanation
Correct option: C
1000
Option C (1000) is correct because the overall gain of cascaded amplifiers is the product of the individual gains.
333 Medium
333 of 370
Remembering +4 | -1
The coordination number of CuCu is
View answer and explanation
Correct option: D
12
Option D (12) is correct because copper has an FCC structure, and the coordination number for FCC structures is 12.
334 Medium
334 of 370
Remembering +4 | -1
The logic behind ‘NOR’ gate is that it gives
View answer and explanation
Correct option: A
High output when both the inputs are low
Option A (High output when both the inputs are low) is correct because a NOR gate outputs a high signal only when both inputs are low.
335 Medium
335 of 370
Understanding +4 | -1
Which of the following is not equal to 1 in Boolean algebra?
View answer and explanation
Correct option: B
A⋅AˉA \cdot \bar A
Option B (A⋅AˉA \cdot \bar A) is correct because in Boolean algebra, A⋅AˉA \cdot \bar A always equals 0, while the other options equal 1.
336 Medium
336 of 370
Remembering +4 | -1
The band gap in germanium and silicon in eVeV respectively is
View answer and explanation
Correct option: A
0.7,1.1
Option A (0.7,1.1) is correct because the band gap for germanium is approximately 0.7 eV and for silicon is approximately 1.1 eV.
337 Medium
337 of 370
Analyzing +4 | -1
A semiconducting material has a band gap of 1 eV1 \mathrm{~eV}. Acceptor impurities are doped into it which create acceptor levels 1 meV1 \mathrm{~meV} above the valence band. Assume that the transition from one energy level to the other is almost forbidden if kTk T is less than 1/501 / 50 of the energy gap. Also, if kTk T is more than twice the gap, the upper levels have maximum population. The temperature of the semiconductor is increased from 0 K0 \mathrm{~K}. The concentration of the holes increases with temperature and after a certain temperature it becomes approximately constant. As the temperature is further increased, the hole concentration again starts increasing at a certain temperature. Find the order of the temperature range in which the hole concentration remains approximately constant.
View answer and explanation
Correct option: A
2020 to 230 K230 \mathrm{~K}
Option A (2020 to 230 K230 \mathrm{~K}) is correct because the hole concentration remains approximately constant within this temperature range, determined by the given conditions on kT and the band gap.
338 Medium
338 of 370
Understanding +4 | -1
Statement I: NOT gate is also called invertor.

Statement II: NOT gate inverts the input signal.
View answer and explanation
Correct option: A
Statement I is true, Statement II is true; Statement II is
the correct explanation for Statement I
Option A is correct because a NOT gate, also known as an inverter, performs the logical operation of inverting the input signal.
339 Easy
339 of 370
Application +4 | -1
A n – p – n transistor having a.c. current gain of 50 is to be used to make an amplifier of power gain of 300. What will be the voltage gain of the amplifier
View answer and explanation
Correct option: B
6
Option B (6) is correct because voltage gain is the power gain divided by the current gain.
340 Medium
340 of 370
Remembering +4 | -1
The maximum efficiency of full wave rectifier is
View answer and explanation
Correct option: D
81.2%81.2\mathrm{ }\%
Option D (81.2%81.2\mathrm{ }\%) is correct because the maximum efficiency of a full-wave rectifier is 81.2%.
341 Medium
341 of 370
Remembering +4 | -1
A PP-type semiconductor can be obtained by adding
View answer and explanation
Correct option: B
Gallium to pure silicon
Option B (Gallium to pure silicon) is correct because adding a trivalent impurity like Gallium to silicon creates a P-type semiconductor with holes as the majority charge carriers.
342 Medium
342 of 370
Understanding +4 | -1
The electrical resistance of depletion layer is large because
View answer and explanation
Correct option: A
It has no charge carriers
Option A (It has no charge carriers) is correct because the depletion layer is formed by the diffusion of charge carriers, leaving behind a region devoid of mobile charges.
343 Medium
343 of 370
Understanding +4 | -1
In a properly biased transistor
View answer and explanation
Correct option: D
Emitter-base depletion layer is small but base-collector depletion layer is large
Option D (Emitter-base depletion layer is small but base-collector depletion layer is large) is correct because in a properly biased transistor, the emitter-base junction is forward biased (small depletion layer) and the base-collector junction is reverse biased (large depletion layer).
344 Medium
344 of 370
Understanding +4 | -1
The conductivity of a semiconductor increases with increase in temperature because
View answer and explanation
Correct option: D
Number density of current carriers increases, relaxation time decreases but effect of decrease in relaxation time is much less than increase in number of density
Option D is correct because the conductivity of a semiconductor increases with temperature due to a significant increase in the number density of current carriers, despite a decrease in relaxation time.
345 Medium
345 of 370
Application +4 | -1
In a reverse biased diode when the applied voltage changes by 1 V, the current is found to change by 0.5 μA.0.5\,\mu A. The reverse bias resistance of the diode is [in ohm]
View answer and explanation
Correct option: B
2×1062 \times {10^6}
Option B (2×1062 \times {10^6}) is correct because the reverse bias resistance is calculated by dividing the change in voltage by the change in current.
346 Medium
346 of 370
Understanding +4 | -1
Assertion: Photodiode work in reverse bias.
Reason: Change in diode current increases with increase in intensity.
View answer and explanation
Correct option: B
If both assertion and reason are true but reason is not the correct explanation of assertion
Option B (If both assertion and reason are true but reason is not the correct explanation of assertion) is correct because both the photodiode working in reverse bias and the increase in diode current with light intensity are true, but the latter doesn't explain the former.
347 Medium
347 of 370
Application +4 | -1
Calculate the number of states per cubic metre of sodium in 3 s3 \mathrm{~s} band. The density of sodium is 1013 kgm−31013 \mathrm{~kgm}^{-3}. How many of them are empty?
View answer and explanation
Correct option: A
5.3×1028,2.65×10285.3 \times 10^{28}, 2.65 \times 10^{28}
Option A (5.3×1028,2.65×10285.3 \times 10^{28}, 2.65 \times 10^{28}) is correct because it calculates the total number of states and the number of unoccupied states in the 3s band of sodium, based on its density and atomic mass.
348 Medium
348 of 370
Understanding +4 | -1
Why is there sudden increase in current in zener diode?
View answer and explanation
Correct option: A
Due to rupture of bonds
Option A is correct. The sudden increase in current in a Zener diode occurs due to the rupture of covalent bonds in the depletion region under high reverse voltage.
349 Medium
349 of 370
Understanding +4 | -1
In Boolean algebra, Aˉ⋅Bˉ‾\overline {\bar A \cdot \bar B} is equal to
View answer and explanation
Correct option: D
A+BA + B
Option D (A+BA + B) is correct because, according to De Morgan's theorem, the complement of the product of complements is the sum of the variables.
350 Medium
350 of 370
Application +4 | -1
A common emitter amplifier gives an output of 3V for an input of 0.01 V. If β\beta of the transistor is 100 and the input resistance is 1 kΩ,1\,k\Omega , then the collector resistance is
View answer and explanation
Correct option: B
3 kΩ3\,k\Omega
Option B (3 kΩ3\,k\Omega) is correct because the collector resistance is calculated using the voltage gain, beta, and input resistance of the common emitter amplifier.
351 Medium
351 of 370
Understanding +4 | -1
The Boolean expression P+P‾Q{P}+\overline{{P}} {Q}, where P{P} and Q{Q} are the inputs of the logic circuit, represents
View answer and explanation
Correct option: D
OR gate
Option D (OR gate) is correct because the Boolean expression P+P‾Q{P}+\overline{{P}} {Q} simplifies to P+Q{P} + {Q}, which is the OR operation.
352 Medium
352 of 370
Understanding +4 | -1
Which one of the following statements is not correct
View answer and explanation
Correct option: C
An ideal diode is an open switch
Option C (An ideal diode is an open switch) is correct because an ideal diode acts as a closed switch in forward bias and an open switch in reverse bias.
353 Medium
353 of 370
Remembering +4 | -1
The value of ripple factor for full wave rectifier is
View answer and explanation
Correct option: B
48.2%48.2\%
Option B (48.2%48.2\%) is correct because the ripple factor for a full-wave rectifier is approximately 0.482, which is equivalent to 48.2%.
354 Medium
354 of 370
Remembering +4 | -1
Respective ripple factor and efficiency of a full wave Rectifier are:
View answer and explanation
Correct option: D
0.48,81.2%0.48,81.2 \%
Option D (0.48, 81.2 %) is correct because these are the standard ripple factor and efficiency values for a full-wave rectifier.
355 Medium
355 of 370
Understanding +4 | -1
The truth table shown in figure is for
A    0   0   1   1
B    0   1   0   1
Y    1   0   0   1 
View answer and explanation
Correct option: C
XNOR
Option D (Zero) is correct because the cross product of two vectors results in a vector perpendicular to both, and the dot product of perpendicular vectors is zero.
356 Medium
356 of 370
Understanding +4 | -1
Statement I: A Zener diode is used to get constant voltage at variable current under reverse bias.

Statement II: The most popular use of Zener diode is as voltage regulator.
View answer and explanation
Correct option: A
Statement I is true, Statement II is true; Statement II is the correct explanation for Statement I
Option A (Statement I is true, Statement II is true; Statement II is the correct explanation for Statement I) is correct because Zener diodes are used as voltage regulators due to their ability to maintain constant voltage under reverse bias.
357 Medium
357 of 370
Remembering +4 | -1
Which of the following is correct, about doping in a transistor?
View answer and explanation
Correct option: D
Emitter is heavily doped, collector is moderately doped and base is lightly doped
The correct answer is D (Emitter is heavily doped, collector is moderately doped and base is lightly doped) because this configuration optimizes transistor performance.
358 Medium
358 of 370
Understanding +4 | -1
Statement-I: For a given applied voltage, conduction current in n-type semiconductor is more than that in p-type semiconductor.

Statement-II: Mobility of electrons is greater than that of holes.
View answer and explanation
Correct option: A
If both statements are correct.
Option A is correct because both statements are true: n-type semiconductors have higher conduction current due to higher electron mobility compared to holes in p-type semiconductors.
359 Medium
359 of 370
Remembering +4 | -1
In half wave rectification, if the input frequency is
120 Hz, then the output frequency would be:
View answer and explanation
Correct option: B
120 Hz
Option B (120 Hz) is correct. In half-wave rectification, the output frequency is the same as the input frequency.
360 Medium
360 of 370
Understanding +4 | -1
When AA is the internal stage gain of an amplifier and β\mathrm{\beta } is the feedback ratio, then the amplifier becomes as oscillator if
View answer and explanation
Correct option: D
β\mathrm{\beta } is positive and magnitude of β=1/A\mathrm{\beta } = 1/A
Option D (β\mathrm{\beta } is positive and magnitude of β=1/A\mathrm{\beta } = 1/A) is correct because the Barkhausen criterion for oscillation requires positive feedback and a loop gain of unity (Aβ = 1).
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