Semi conductor devices practice · Medium

Choose the only false statement from the following:

Which of the following is an amorphous substance?

In a $P$-type semi-conductor, germanium is dopped with

In a common-base mode of a transistor, the collector current is 5.488 mA for an emitter current of 5.60 mA. The value of the base current amplification factor ($\mathrm{\beta }$) will be

Assertion : Depletion Region of Zener diode is small.

Reason : P-N junction are highly dopped. In Zener diode.

When a $p - n$ junction diode is connected in forward bias its barrier potential

The resistivity of a semiconductor at room temperature is in between

The relation between the energy ${E_f}$ of fermi level, height ${E_b}$ of potential barrier and work function ${W_0}$ is

In a transistor in common-emitter configuration, the ratio of power gain to voltage gain is

The charge on a hole is equal to the charge of

In $N$-type semiconductors, majority charge carriers are

The drift current in a p-n junction is

The coordination number of $Cu$ is

Statement-I: A $\mathrm{p-n}$ junction with reverse bias can be used as a photo-diode to measure light intensity.

Statement-II: In a reverse bias condition the current is small but it is more sensitive to change in incident light intensity.

The positive feedback is required by an amplifier to act an oscillator. The feedback here means:

The collector supply voltage is 6 V and the voltage drop across a resistor of $600\mathrm{\Omega }$ in the collector circuit is 0.6 V, in a transistor connector in common emitter mode. If the current gain is 20, the base current is

At room temperature, a $P$-type semiconductor has

When $N$-type of semiconductor is heated

Current gain in common base configuration is less than 1 because

Which impurity is doped in $Si$ to form $N$-type semi-conductor

The $n$-type semiconductors are obtained, when germanium is doped with

The phenomenon of thermionic emission was discovered by

Statement-I: The current gain in common base circuit is always less than one.

Statement-II: At constant collector voltage the change in collector current is more than the change in emitter current.

Assertion : Photodiode always works under small reverse bias condition.

Reason : It is easier to detect current changes in reverse bias.

The dominant mechanism for motion of charge carriers in forward and reverse biased silicon P-N junctions are

Assertion(A): Photodiodes are preferably
used in the reverse bias condition for
measuring light intensity.

Reason(R): The fractional change due to the
photo-effects on the minority carrier
dominated reverse bias current is more easily
measurable than the fractional change in the
forward bias current.

Assertion : Photodiode & photovoltaic cell are based on the same principle.

Reason : Both use same method of operations to work.

The overall gain of a multistage amplifier is 100. When negative feedback is applied, the gain reduces to 10 . Find the fraction of the output that is feedback to the input.

In a triode amplifier, the value of maximum gain is equal to

The main cause of zener breakdown is