JEE PHYSICS MCQ: SEMI CONDUCTOR DEVICES

Pure Si at temperature of $300 \mathrm{~K}$ has same electron $\left(\mathrm{n}_{\mathrm{e}}\right)$ and hole $\left(\mathrm{n}_{\mathrm{k}}\right)$ concentrations of $1.5 \times 10^{16} \mathrm{~m}^{-3}$. Doping by 'In' increases $\mathrm{n}_{\mathrm{h}}$ to $3 \times 10^{22}$ $\mathrm{m}^{-3}$. Calculate $\mathrm{n}_{\mathrm{e}}$ in the doped $\mathrm{Si}$.