NEET UG PHYSICS MCQ: SEMI CONDUCTOR DEVICES

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Application +4 | -1

Pure

Si

500\;K

has equal number of electron

\left( {{n_e}} \right)

and hole

\left( {{n_h}} \right)

concentrations of

1.5 \times {10^{16}}{m^{ - 3}}

. Doping by indium increases

{n_h}

4.5 \times {10^{22}}{m^{ - 3}}

. The doped semiconductor is of

View answer and explanation

Correct option: B

\mathrm{p} -

type having electron concentration

{n_e} = 5 \times {10^9}{m^{ - 3}}

Option B is correct because doping with Indium creates a p-type semiconductor, and the electron concentration is calculated using the mass action law.

More Questions from SEMI CONDUCTOR DEVICES

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Following is the relation between current and charge

I = A{T^2}{e^{q/{V_L}}}

, then value of

{V_L}

will be To measure light intensity we use The ratio of RMS output voltage of full wave rectifier and half wave rectifier is

\sqrt{n}.

The value of

n

is? (The input voltage is sine wave). The truth table shown in figure is for
A    0   0   1   1
B    0   1   0   1
Y    1   0   0   1  The average value of output direct current in a half wave rectifier is A

p - n\;

junction has acceptor impurity concentration of

{10^{17}}\mathrm{c}{\mathrm{m}^{ - 3}}

in the

P

side and donor impurity concentration of

{10^{16}}

\mathrm{c}{\mathrm{m}^{ - 3}}

in the

N

side. What is the contact potential at the junction? (

kT =

thermal energy, intrinsic carrier concentration

{n_i} = 1.4 \times {10^{10}}

\mathrm{c}{\mathrm{m}^{ - 3}}

)