NEET UG PHYSICS MCQ: SEMI CONDUCTOR DEVICES

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The relation between dynamic plate resistance

\left( {{r_p}} \right)

of a vacuum diode and plate current in the space charge limited region, is

View answer and explanation

Correct option: D

{r_p} \propto \frac{1}{{{{\left( {{I_p}} \right)}^{1/3}}}}

Option D (

{r_p} \propto \frac{1}{{{{\left( {{I_p}} \right)}^{1/3}}}}

) is correct because in the space charge limited region, the plate current is proportional to the 3/2 power of the plate voltage, which implies that the dynamic plate resistance is inversely proportional to the 1/3 power of the plate current.

More Questions from SEMI CONDUCTOR DEVICES

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Following is the relation between current and charge

I = A{T^2}{e^{q/{V_L}}}

, then value of

{V_L}

will be To measure light intensity we use The ratio of RMS output voltage of full wave rectifier and half wave rectifier is

\sqrt{n}.

The value of

n

is? (The input voltage is sine wave). The truth table shown in figure is for
A    0   0   1   1
B    0   1   0   1
Y    1   0   0   1  The average value of output direct current in a half wave rectifier is A

p - n\;

junction has acceptor impurity concentration of

{10^{17}}\mathrm{c}{\mathrm{m}^{ - 3}}

in the

P

side and donor impurity concentration of

{10^{16}}

\mathrm{c}{\mathrm{m}^{ - 3}}

in the

N

side. What is the contact potential at the junction? (

kT =

thermal energy, intrinsic carrier concentration

{n_i} = 1.4 \times {10^{10}}

\mathrm{c}{\mathrm{m}^{ - 3}}

)