Back to SEMI CONDUCTOR DEVICES

NEET UG PHYSICS MCQ: SEMI CONDUCTOR DEVICES

1 Medium

1 of 1

Analyzing +4 | -1

Assertion: A P-N photodiode is made from a semiconductor for which

\mathrm{Eg}=2.8 \mathrm{eV}

. This photodiode will not detect the wavelength of

6000 \mathrm{~nm}

.

Reason: A PN photodiode detects wavelength I if

\frac{h c}{\lambda} > E_g

View answer and explanation

Correct option: B

Both Assertion and Reason are true, but Reason is not the correct explanation for Assertion

Option B is correct because both the assertion and reason are true, but the reason doesn't fully explain the assertion. The photodiode won't detect the wavelength because the photon energy is less than the band gap energy, and the reason correctly states the condition for detection.

More Questions from SEMI CONDUCTOR DEVICES

Practice All Chapter MCQs →

Following is the relation between current and charge

I = A{T^2}{e^{q/{V_L}}}

, then value of

{V_L}

will be To measure light intensity we use The ratio of RMS output voltage of full wave rectifier and half wave rectifier is

\sqrt{n}.

n

is? (The input voltage is sine wave). The truth table shown in figure is for
A    0   0   1   1
B    0   1   0   1
Y    1   0   0   1  The average value of output direct current in a half wave rectifier is A

p - n\;

junction has acceptor impurity concentration of

{10^{17}}\mathrm{c}{\mathrm{m}^{ - 3}}

P

side and donor impurity concentration of

{10^{16}}

\mathrm{c}{\mathrm{m}^{ - 3}}

N

side. What is the contact potential at the junction? (

kT =

thermal energy, intrinsic carrier concentration

{n_i} = 1.4 \times {10^{10}}

\mathrm{c}{\mathrm{m}^{ - 3}}