NEET UG PHYSICS MCQ: SEMI CONDUCTOR DEVICES

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Analyzing +4 | -1

Statement-I: The dominant mechanism for motion of charge carriers in forward and reverse biased silicon

\mathrm{P}-\mathrm{N}

junction are drift in both forward and reverse bias.

Statement-II: In reverse biasing, no current flow through the junction.

View answer and explanation

Correct option: D

If both statements are incorrect.

Option D is correct because both statements are incorrect. The dominant mechanism is diffusion in forward bias and drift in reverse bias. Also, a small current flows in reverse bias due to minority carriers.

More Questions from SEMI CONDUCTOR DEVICES

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Following is the relation between current and charge

I = A{T^2}{e^{q/{V_L}}}

, then value of

{V_L}

will be To measure light intensity we use The ratio of RMS output voltage of full wave rectifier and half wave rectifier is

\sqrt{n}.

The value of

n

is? (The input voltage is sine wave). The truth table shown in figure is for
A    0   0   1   1
B    0   1   0   1
Y    1   0   0   1  The average value of output direct current in a half wave rectifier is A

p - n\;

junction has acceptor impurity concentration of

{10^{17}}\mathrm{c}{\mathrm{m}^{ - 3}}

in the

P

side and donor impurity concentration of

{10^{16}}

\mathrm{c}{\mathrm{m}^{ - 3}}

in the

N

side. What is the contact potential at the junction? (

kT =

thermal energy, intrinsic carrier concentration

{n_i} = 1.4 \times {10^{10}}

\mathrm{c}{\mathrm{m}^{ - 3}}

)