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NEET UG PHYSICS MCQ: SEMI CONDUCTOR DEVICES

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Analyzing +4 | -1

Assertion: Silicon is preferred over germanium for making semiconductor devices.

Reason: The energy gap for germanium is more than the energy gap of silicon.

View answer and explanation

Correct option: C

Assertion is true but reason is false

Option C (Assertion is true but reason is false) is correct because silicon is preferred due to its wider temperature range and the energy gap of germanium is smaller than silicon.

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Following is the relation between current and charge

I = A{T^2}{e^{q/{V_L}}}

, then value of

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\sqrt{n}.

n

is? (The input voltage is sine wave). The truth table shown in figure is for
A    0   0   1   1
B    0   1   0   1
Y    1   0   0   1  The average value of output direct current in a half wave rectifier is A

p - n\;

junction has acceptor impurity concentration of

{10^{17}}\mathrm{c}{\mathrm{m}^{ - 3}}

P

side and donor impurity concentration of

{10^{16}}

\mathrm{c}{\mathrm{m}^{ - 3}}

N

side. What is the contact potential at the junction? (

kT =

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{n_i} = 1.4 \times {10^{10}}

\mathrm{c}{\mathrm{m}^{ - 3}}